Samsung and team work edited a new semiconductor material, amorphous boron nitride (a-BN)

Samsung announced the discovery of a new material called amorphous boron nitride (a-BN) with partners. Researchers at Samsung Advanced Technology Research Institute (SAIT) worked with the Ulsan National Institute of Science and Technology (UNIST) and the University of Cambridge on the discovery. The co-authors published their findings in the journal Nature, and believe the material will “accelerate the emergence of the next generation of semiconductors.”

Samsung and team work edited a new semiconductor material, amorphous boron nitride (a-BN)

Explaining the newly discovered amorphous boron nitride, Samsung said it consists of boron and nitrogen atoms, has amorphous molecular structures, and the new material comes from white graphene, but different molecular structures make a-BN and white graphene “uniquely different.”

Samsung says a-BN is expected to be widely used in DRAM and NAND solutions because it minimizes electrical interference and allows wafer sizing at relatively low temperatures of 400 degrees C.

Hyeon-Jin Shin, the lead researcher at SAIT and head of graphene projects, said in commenting on the material.

Samsung and team work edited a new semiconductor material, amorphous boron nitride (a-BN)

“In order to improve the compatibility of graphene with silicon-based semiconductor processes, wafer-grade graphene growth on semiconductor substrates should be achieved at temperatures below 400 degrees C. We are also working to expand graphene beyond semiconductors. “

The company did not give a date on when it hoped to start using the new material in its hardware products, but said it could be used in DRAM and NAND solutions for semiconductors, especially next-generation memory solutions for large-scale servers.