Changxin Storage Announces New Roadmap: Production of 19nm Computer Memory Has Begun

Changxin Storage Technology Co., Ltd. (CXMT) has begun production of computer memory based on the 19nm process, and the company has developed at least two 10nm process roadmaps, with plans to produce various types of dynamic random memory (DRAM) in the future. In order to increase production, Changxin Storage also plans to build two other fabs. As part of the Made in China 2025 project, it is expected to support about half of the world’s DRAM needs.

Changxin Storage Announces New Roadmap: Production of 19nm Computer Memory Has Begun

(Image via AnandTech)

Headquartered in Hefei, Anhui Province, CXMT currently employs more than 3,000 people and has a 65,000 m2 cleanroom fab. Formerly known as Innotron Memory, the company has been working on a number of projects since its inception in 2016.

Changxin Storage Announces New Roadmap: Production of 19nm Computer Memory Has Begun

Changxin currently has a monthly production capacity of about 20,000 wafers, but as the company’s order volume increases, production will gradually increase. By the end of 2020, its 10nm process technology is expected to have a production capacity of 120,000 wafers (12 inches), comparable toSK Hynix’s plant in Wuxi, China.

Changxin Storage Announces New Roadmap: Production of 19nm Computer Memory Has Begun

CXMT says 77% of its employees are engineers working in research and development- With IP licensing from Chimonda, the company has successfully completed its early build-up.

Changxin Storage Announces New Roadmap: Production of 19nm Computer Memory Has Begun

CXMT is using its 10G1 technology (19 nm process) to manufacture 4 Gb and 8 Gb DDR4 memory chips with the goal of commercializing and launching them in the first quarter of 2020, which will be used in LPDDR4X memory manufactured in the second half of 2020.

Changxin Storage Announces New Roadmap: Production of 19nm Computer Memory Has Begun

From the roadmap, CXMT also plans 10G3 (17 nm process) products for DDR4, LPDDR4X, DDR5, and LPDDR5. While it is not yet possible to shake up the industry’s established rivals, the company has placed considerable emphasis on the development of innovative processes and the expansion of production capacity.

Changxin Storage Announces New Roadmap: Production of 19nm Computer Memory Has Begun

The CXMT 10G5 process is expected to use HKMG and air gap bitline technology, as well as column capacitors, all-purpose gate transistors, and ultra-ultraviolet lithography (EUVL) processes in the long term.

Changxin Storage Announces New Roadmap: Production of 19nm Computer Memory Has Begun

Although the company plans to start production of DDR4 memory in early 2019, the new roadmap has been delayed by a year. Finally, the company plans to build two more DRAM fabs.

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