The birth of the first DRAM supplier in China: 10nm process monthly production capacity will account for 3% of the world

Recently, according tomedia reports, Changxin Storage officially announced that it has become the first and only DRAM supplier in China. Changxin storage in May 2016 in Hefei, Anhui Province, specializing in DRAM memory research and development, production and sales, has now built the first 300 mm fab and put into production, and through the special research and development line rapid iteration of research and development, combined with the current advanced equipment to greatly improve the process, developed a unique technology system.

The birth of the first DRAM supplier in China: 10nm process monthly production capacity will account for 3% of the world

Changxin memory independent manufacturing project with a total investment of 150 billion yuan, will produce the first generation of domestic 10nm process level 8Gb DDR4 memory chip, and obtained the Ministry of Industry and Information Technology’s testing agency, China Electronic Technology Standardization Research Institute of mass production yield detection report.

The fab produces 20,000 wafers per month, and by the second quarter of 2020 this rate will increase to 40,000 wafers per month, or about 3% of the world’s memory capacity.

At present, Changxin storage domestic only competitor is Tsinghua Ziguang, which plans to build a research and development center and DRAM fab in Chongqing in 2021, 3-5 years away from mass production.

Just a few days ago, Changxin Storage Technologies Co., Ltd. and Wi-LAN Inc., a subsidiary of Canadian company Quarterhill Inc., jointly announced today that it has a Patent for DRAM Memory developed by former memory manufacturer Chimonda, a wholly owned subsidiary of Changxin Storage and WiLAN, Polaris. Innovations Limited has reached a patent license agreement and a patent purchase agreement, and Changxin has harvested a large number of original Qimonda memory patents.

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