Memory manufacturers have been trying for years to integrate the common benefits of dynamic random memory (RAM) and flash memory (NAND) into a single package, but with little success. The new non-volatile memory is expected to be a key to technological breakthroughs. It has RAM-like operating speeds, and NAND’s power-off non-volatile characteristics. The ability to open instantaneously and recover from the last interrupted location paves the way for the arrival of an instant (Instand-On) PC.
Infographic (from: Intel, via TechSpot)
Friends who pay close attention to storage technology may have more or less heard of several new technologies that make RAM and SSDs run faster, denser, and more energy-efficient.
Other studies have tried to push the “in-memory computing” approach, essentially eliminating the performance lag caused by data moving back and forth between processors, memory, and other components.
The idea is based on the fact that writing data to DRAM is a fast and energy-efficient solution. Once power is lost, the integrity of the data is also difficult to maintain. In addition, the system must constantly refresh the data, resulting in inefficient.
NAND, on the other hand, is a relatively robust way of storing data, but writing and erasing is too slow, resulting in reduced storage unit performance and difficulty replacing existing DRAM.
The good news is that researchers at Lancaster University in the UK say they have created a new type of non-volatile memory that is comparable to DRAM and consumes only one percent of its write energy.
Known as THE UK III-V memory, this technology is manufactured based on a 20nm lithography process with a write time of only 5ns (equivalent to DRAM) and provides simple read characteristics similar to flash memory.
Even better, this is a non-volatile storage that maintains data integrity in the event of a power outage.
(UK III-V Prototype Transistor)
To date, the prototype unit has been able to erase and program data at 2.1V. In contrast, a typical NAND unit requires a 3V erasure voltage applied.
Using alternating GaSb and InAs (arsenic) layers, the team created the so-called “double-trap resonance tunnel junction” and achieved this goal.
The new storage unit works in a similar way to flash memory, using a “float” to store “0” or “1”, but here the InAs float is isolated by the discontinuous GaSb and AlSb large bands.
Simply put, the transistors used in the UK III-V memory have a better switching state. They are designed to use two materials to ensure that information is stored for a particularly long period of time.
While details such as the power consumption required for read operations are not disclosed, lead researcher Manus Hayne says the new memory does not need to be rebuilt or continuously refreshed to ensure data integrity when reading “1” repeatedly.
Of course, what interests us most is that, even in the event of a power outage, UK III-V memory retains data and returns to the last work interruption in a flash after power ing-up.
Manus Hayne says the team is patenting new technology and is expected to disrupt the $100 billion DRAM and flash memory market in the future.