Last week TSMC announced that it would spend $15 to $16 billion on capital in 2020, 80 percent of which will be invested in advanced capacity expansion, including 7nm, 5nm and 3nm. This time, the power will not announce the 3nm process, because they will have a special release in April, will disclose the details of the 3nm process.
TSMC’s 3nm process technology ultimately chooses what route is important for the semiconductor industry, as tsudie and Samsung are now able to reach 3nm nodes, with Samsung announcing the 3nm process last year, explicitly abandoning FinFET transistors and switching to GAA surround gate transistor technology.
Specifically, Samsung’s 3nm process is divided into 3GAE and 3GAP, which perform better, but the first generation of GAA transistor technology 3GAE. According to official sequined, Samsung has created MBCFET (Multi-Bridge-Channel FET, multi-bridge-channel field effect tube) using nanochip devices, which can significantly enhance transistor performance, replacing FinFET transistor technology.
In addition, MBCFET technology is compatible with existing FinFET manufacturing processes and equipment, thus accelerating process development and production.
At the 2019 SFF conference in Japan, Samsung also announced specific indicators of the 3nm process, which reduces core area by 45%, power consumption by 50% and performance by 35% compared to the current 7nm process.
Samsung plans to invest $116 billion to build the semiconductor kingdom by 2030, because it lags behind TSMC on 7nm and 5nm nodes, so Samsung is betting on 3nm nodes, hoping to surpass TSMC as the first large wafer factory on this node, so Samsung has high hopes for the 3GAE process. Mass production will be available as soon as 2021.
As for TSMC, they have also invested heavily in 3nm nodes, announcing last year that they would spend $19.5 billion to build a 3nm plant, which will officially start in 2020, though technical details have not been disclosed, especially whether TSMC will choose GAA transistors like Samsung did or will continue to improve FinFET transistors. These two technology routes will influence the choice of many high-end chips in the future.